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Gate oxide thickness influence on the gate induced floating body effect in SOI technology

dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorMartino, J.M.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T06:13:28Z
dc.date.available2021-10-17T06:13:28Z
dc.date.issued2008
dc.identifier.issn1807-1953
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13292
dc.sourceIIOimport
dc.titleGate oxide thickness influence on the gate induced floating body effect in SOI technology
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage91
dc.source.endpage95
dc.source.journalJournal of Integrated Circuits and Systems
dc.source.issue2
dc.source.volume3
imec.availabilityPublished - open access


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