Show simple item record

Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs

dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T06:13:29Z
dc.date.available2021-10-17T06:13:29Z
dc.date.issued2008
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13293
dc.sourceIIOimport
dc.titleTemperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1751
dc.source.endpage1754
dc.source.journalSolid-State Electronics
dc.source.issue11
dc.source.volume52
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
17433.pdf
Size:
270.5Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record