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Electronic structure of the interface of aluminum nitride with Si(100)

dc.contributor.authorBadylevich, M.
dc.contributor.authorShamuilia, S.
dc.contributor.authorAfanas'ev, V.V.
dc.contributor.authorStesmans, Andre
dc.contributor.authorFedorenko, Y.G.
dc.contributor.authorZhao, Chao
dc.date.accessioned2021-10-17T06:14:27Z
dc.date.available2021-10-17T06:14:27Z
dc.date.issued2008
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13325
dc.sourceIIOimport
dc.titleElectronic structure of the interface of aluminum nitride with Si(100)
dc.typeJournal article
dc.contributor.imecauthorStesmans, Andre
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage93713
dc.source.journalJournal of Applied Physics
dc.source.issue9
dc.source.volume104
imec.availabilityPublished - open access


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