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Analysis of a narrow-base laterel IGBT with double buried layer for junction-isolated smart-power technologies

dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDoutreloigne, Jan
dc.contributor.authorVanmeerbeek, P.
dc.contributor.authorMoens, P.
dc.date.accessioned2021-10-17T06:14:41Z
dc.date.available2021-10-17T06:14:41Z
dc.date.issued2008
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13331
dc.sourceIIOimport
dc.titleAnalysis of a narrow-base laterel IGBT with double buried layer for junction-isolated smart-power technologies
dc.typeJournal article
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDoutreloigne, Jan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage435
dc.source.endpage445
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue1
dc.source.volume55
imec.availabilityPublished - open access


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