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Back and front interface related generation-recombination noise in buried-channel SOI p-MOSFET's

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorPetrichuk, M.
dc.contributor.authorGarbar, N.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T14:44:21Z
dc.date.available2021-09-29T14:44:21Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1335
dc.sourceIIOimport
dc.titleBack and front interface related generation-recombination noise in buried-channel SOI p-MOSFET's
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage417
dc.source.endpage423
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue3
dc.source.volume43
imec.availabilityPublished - open access


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