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The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs

dc.contributor.authorMenozzi, R.
dc.contributor.authorBorgarino, M.
dc.contributor.authorCova, P.
dc.contributor.authorBaeyens, Yves
dc.contributor.authorFantini, F.
dc.date.accessioned2021-09-29T14:45:48Z
dc.date.available2021-09-29T14:45:48Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1345
dc.sourceIIOimport
dc.titleThe effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage1899
dc.source.endpage1902
dc.source.journalMicroelectronics and Reliability
dc.source.issue11_12
dc.source.volume36
imec.availabilityPublished - imec
imec.internalnotesESREF '96 - 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis. 8-11 Oct. 1996; Enschede, Netherlands


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