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AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity

dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorDerluyn, Joff
dc.contributor.authorSijmus, Bram
dc.contributor.authorFavia, Paola
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-17T06:29:55Z
dc.date.available2021-10-17T06:29:55Z
dc.date.issued2008
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13505
dc.sourceIIOimport
dc.titleAlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
dc.typeJournal article
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewyes
dc.source.beginpage1553
dc.source.endpage1555
dc.source.journalJapanese Journal of Applied Physics
dc.source.issue3
dc.source.volume47
imec.availabilityPublished - imec


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