Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
dc.contributor.author | Cheng, Kai | |
dc.contributor.author | Motsnyi, Vasyl | |
dc.contributor.author | Leys, Maarten | |
dc.contributor.author | Degroote, Stefan | |
dc.contributor.author | Sijmus, Bram | |
dc.contributor.author | Germain, Marianne | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-17T06:30:29Z | |
dc.date.available | 2021-10-17T06:30:29Z | |
dc.date.issued | 2008 | |
dc.identifier.issn | 1610-1634 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13509 | |
dc.source | IIOimport | |
dc.title | Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE | |
dc.type | Journal article | |
dc.contributor.imecauthor | Motsnyi, Vasyl | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.contributor.orcidimec | Motsnyi, Vasyl::0000-0001-5297-9298 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 1624 | |
dc.source.endpage | 1626 | |
dc.source.journal | Physica Status Solidi C | |
dc.source.issue | 6 | |
dc.source.volume | 5 | |
imec.availability | Published - imec |
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