Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics
dc.contributor.author | Croitoru, Mihail | |
dc.contributor.author | Gladilin, Vladimir | |
dc.contributor.author | Fomin, Vladimir | |
dc.contributor.author | Devreese, Jozef | |
dc.contributor.author | Magnus, Wim | |
dc.contributor.author | Schoenmaker, Wim | |
dc.contributor.author | Soree, Bart | |
dc.date.accessioned | 2021-10-17T06:39:26Z | |
dc.date.available | 2021-10-17T06:39:26Z | |
dc.date.issued | 2008 | |
dc.identifier.issn | 0038-1098 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13571 | |
dc.source | IIOimport | |
dc.title | Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics | |
dc.type | Journal article | |
dc.contributor.imecauthor | Magnus, Wim | |
dc.contributor.imecauthor | Soree, Bart | |
dc.contributor.orcidimec | Soree, Bart::0000-0002-4157-1956 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 31 | |
dc.source.endpage | 35 | |
dc.source.journal | Solid State Communications | |
dc.source.issue | 1 | |
dc.source.volume | 147 | |
imec.availability | Published - open access |