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High aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seed

dc.contributor.authorDruais, Gael
dc.contributor.authorDilliway, G.
dc.contributor.authorFischer, P.
dc.contributor.authorGuidotti, E.
dc.contributor.authorLuhn, Ole
dc.contributor.authorRadisic, Alex
dc.contributor.authorZahraoui, S.
dc.date.accessioned2021-10-17T06:57:17Z
dc.date.available2021-10-17T06:57:17Z
dc.date.issued2008
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13677
dc.sourceIIOimport
dc.titleHigh aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seed
dc.typeJournal article
dc.contributor.imecauthorRadisic, Alex
dc.source.peerreviewyes
dc.source.beginpage1957
dc.source.endpage1961
dc.source.journalMicroelectronic Engineering
dc.source.issue10
dc.source.volume85
imec.availabilityPublished - imec


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