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dc.contributor.authorEneman, Geert
dc.contributor.authorWiot, Maxime
dc.contributor.authorBrugere, Antoine
dc.contributor.authorSicart i Casain, Oriol
dc.contributor.authorSonde, Sushant
dc.contributor.authorBrunco, David
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorSatta, Alessandra
dc.contributor.authorHellings, Geert
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorClaeys, Cor
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-17T07:00:27Z
dc.date.available2021-10-17T07:00:27Z
dc.date.issued2008
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13694
dc.sourceIIOimport
dc.titleImpact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2287
dc.source.endpage2296
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue9
dc.source.volume55
imec.availabilityPublished - open access


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