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Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs

dc.contributor.authorGaleti, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T07:10:50Z
dc.date.available2021-10-17T07:10:50Z
dc.date.issued2008
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13746
dc.sourceIIOimport
dc.titleImproved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage125011
dc.source.journalSemiconductor Science and Technology
dc.source.volume23
imec.availabilityPublished - open access


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