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Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy

dc.contributor.authorGarleff, J. K.
dc.contributor.authorCelebi, C.
dc.contributor.authorVan Roy, Wim
dc.contributor.authorTang, J. M.
dc.contributor.authorFlatte, M. E.
dc.contributor.authorKoenraad, P. M.
dc.date.accessioned2021-10-17T07:11:52Z
dc.date.available2021-10-17T07:11:52Z
dc.date.issued2008-08
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13751
dc.sourceIIOimport
dc.titleAtomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy
dc.typeJournal article
dc.contributor.imecauthorVan Roy, Wim
dc.contributor.orcidimecVan Roy, Wim::0000-0003-3232-1987
dc.source.peerreviewyes
dc.source.beginpage75313
dc.source.journalPhysical Review B
dc.source.issue7
dc.source.volume78
dc.identifier.urlhttp://link.aps.org/abstract/PRB/v78/e075313
imec.availabilityPublished - imec


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