In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)
dc.contributor.author | Germain, Marianne | |
dc.contributor.author | Cheng, Kai | |
dc.contributor.author | Derluyn, Joff | |
dc.contributor.author | Degroote, Stefan | |
dc.contributor.author | Das, Jo | |
dc.contributor.author | Lorenz, Anne | |
dc.contributor.author | Marcon, Denis | |
dc.contributor.author | Van Hove, Marleen | |
dc.contributor.author | Leys, Maarten | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-17T07:13:31Z | |
dc.date.available | 2021-10-17T07:13:31Z | |
dc.date.issued | 2008 | |
dc.identifier.issn | 1610-1634 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13759 | |
dc.source | IIOimport | |
dc.title | In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111) | |
dc.type | Journal article | |
dc.contributor.imecauthor | Marcon, Denis | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 2010 | |
dc.source.endpage | 2012 | |
dc.source.journal | Physica Status Solidi C | |
dc.source.issue | 6 | |
dc.source.volume | 5 | |
imec.availability | Published - open access |