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On the role of nanocavities in suppressing boron transient enhanced diffusion and deactivation in F+ coimplanted silicon

dc.contributor.authorGiles, Luis Felipe
dc.contributor.authorStapelmann, Chris
dc.contributor.authorCerva, Hans
dc.contributor.authorJahnel, Franz
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorVrancken, Christa
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-17T07:16:23Z
dc.date.available2021-10-17T07:16:23Z
dc.date.issued2008
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13772
dc.sourceIIOimport
dc.titleOn the role of nanocavities in suppressing boron transient enhanced diffusion and deactivation in F+ coimplanted silicon
dc.typeJournal article
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorVrancken, Christa
dc.source.peerreviewyes
dc.source.beginpage103525
dc.source.journalJournal of Applied Physics
dc.source.issue10
dc.source.volume103
imec.availabilityPublished - imec


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