Show simple item record

Low-voltage resistive switching within an oxygen-rich Cu/SbTe interface for application in nonvolatile memory

dc.contributor.authorGoux, Ludovic
dc.contributor.authorLisoni, Judit
dc.contributor.authorGille, Thomas
dc.contributor.authorAttenborough, Karen
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-17T07:22:13Z
dc.date.available2021-10-17T07:22:13Z
dc.date.issued2008
dc.identifier.issn1099-0062
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13797
dc.sourceIIOimport
dc.titleLow-voltage resistive switching within an oxygen-rich Cu/SbTe interface for application in nonvolatile memory
dc.typeJournal article
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpageH245
dc.source.endpageH247
dc.source.journalElectrochemical and Solid-State Letters
dc.source.issue9
dc.source.volume11
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record