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Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)

dc.contributor.authorLauwers, Anne
dc.contributor.authorVeloso, Anabela
dc.contributor.authorChang, Shou-Zen
dc.contributor.authorYu, HongYu
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorKerner, Christoph
dc.contributor.authorDemand, Marc
dc.contributor.authorRothschild, Aude
dc.contributor.authorNiwa, Masaaki
dc.contributor.authorSatoru, Ito
dc.contributor.authorMitshashi, Riichirou
dc.contributor.authorAmeen, Mike
dc.contributor.authorWhittemore, Graham
dc.contributor.authorPawlak, Malgorzata
dc.contributor.authorVrancken, Christa
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorMertens, Sofie
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-17T08:11:54Z
dc.date.available2021-10-17T08:11:54Z
dc.date.issued2008
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13995
dc.sourceIIOimport
dc.titleCost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)
dc.typeJournal article
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage34
dc.source.endpage37
dc.source.journalIEEE Electron Device Letters
dc.source.issue1
dc.source.volume29
imec.availabilityPublished - open access


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