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Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates

dc.contributor.authorLeys, Maarten
dc.contributor.authorCheng, Kai
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorTaylor, C.A.
dc.contributor.authorDawson, P.
dc.date.accessioned2021-10-17T08:19:08Z
dc.date.available2021-10-17T08:19:08Z
dc.date.issued2008
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14021
dc.sourceIIOimport
dc.titleGrowth and characterization of unintentionally doped GaN grown on silicon(111) substrates
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpage4888
dc.source.endpage4890
dc.source.journalJournal of Crystal Growth
dc.source.issue23
dc.source.volume310
imec.availabilityPublished - imec


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