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Growth of InN on Ge(111) by molecular beam epitaxy using a GaN buffer

dc.contributor.authorLieten, Ruben
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorDerluyn, Joff
dc.contributor.authorKuijk, Maarten
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-17T08:23:45Z
dc.date.available2021-10-17T08:23:45Z
dc.date.issued2008
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14037
dc.sourceIIOimport
dc.titleGrowth of InN on Ge(111) by molecular beam epitaxy using a GaN buffer
dc.typeJournal article
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpage1132
dc.source.endpage1136
dc.source.journalJournal of Crystal Growth
dc.source.issue6
dc.source.volume310
dc.identifier.urlhttp://dx.doi.org/10.1016/j.jcrysgro.2007.12.046
imec.availabilityPublished - imec


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