Growth of InN on Ge(111) by molecular beam epitaxy using a GaN buffer
dc.contributor.author | Lieten, Ruben | |
dc.contributor.author | Degroote, Stefan | |
dc.contributor.author | Leys, Maarten | |
dc.contributor.author | Derluyn, Joff | |
dc.contributor.author | Kuijk, Maarten | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-17T08:23:45Z | |
dc.date.available | 2021-10-17T08:23:45Z | |
dc.date.issued | 2008 | |
dc.identifier.issn | 0022-0248 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/14037 | |
dc.source | IIOimport | |
dc.title | Growth of InN on Ge(111) by molecular beam epitaxy using a GaN buffer | |
dc.type | Journal article | |
dc.contributor.imecauthor | Lieten, Ruben | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.source.peerreview | yes | |
dc.source.beginpage | 1132 | |
dc.source.endpage | 1136 | |
dc.source.journal | Journal of Crystal Growth | |
dc.source.issue | 6 | |
dc.source.volume | 310 | |
dc.identifier.url | http://dx.doi.org/10.1016/j.jcrysgro.2007.12.046 | |
imec.availability | Published - imec |
Files in this item
Files | Size | Format | View |
---|---|---|---|
There are no files associated with this item. |