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Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices

dc.contributor.authorMagnone, Paolo
dc.contributor.authorSubramanian, Vaidy
dc.contributor.authorParvais, Bertrand
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorPace, Calogero
dc.contributor.authorDehan, Morin
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorCrupi, Felice
dc.contributor.authorPierro, Silvio
dc.date.accessioned2021-10-17T08:41:55Z
dc.date.available2021-10-17T08:41:55Z
dc.date.issued2008
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14099
dc.sourceIIOimport
dc.titleGate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices
dc.typeJournal article
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1728
dc.source.endpage1731
dc.source.journalMicroelectronic Engineering
dc.source.issue3
dc.source.volume85
imec.availabilityPublished - open access


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