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Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects

dc.contributor.authorMukhopadhyay, Bratati
dc.contributor.authorBiswas, Abhijit
dc.contributor.authorBasu, P.K.
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T09:11:18Z
dc.date.available2021-10-17T09:11:18Z
dc.date.issued2008
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14195
dc.sourceIIOimport
dc.titleModelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage59017
dc.source.journalSemiconductor Science and Technology
dc.source.issue9
dc.source.volume23
imec.availabilityPublished - imec


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