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Carrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities

dc.contributor.authorRudenko, Tamara
dc.contributor.authorKilchytska, Valeria
dc.contributor.authorCollaert, Nadine
dc.contributor.authorJurczak, Gosia
dc.contributor.authorNazarov, A.
dc.contributor.authorFlandre, Denis
dc.date.accessioned2021-10-17T10:20:47Z
dc.date.available2021-10-17T10:20:47Z
dc.date.issued2008
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14403
dc.sourceIIOimport
dc.titleCarrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage3532
dc.source.endpage3541
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume55
imec.availabilityPublished - imec


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