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Simulation study for the CDM ESD behaviour of the grounded-gate nMOS

dc.contributor.authorRuss, Christian
dc.contributor.authorVerhaege, Koen
dc.contributor.authorBock, Karlheinz
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-29T15:20:18Z
dc.date.available2021-09-29T15:20:18Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1445
dc.sourceIIOimport
dc.titleSimulation study for the CDM ESD behaviour of the grounded-gate nMOS
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1739
dc.source.endpage1742
dc.source.journalMicroelectronics and Reliability
dc.source.volume36
imec.availabilityPublished - open access
imec.internalnotesPaper from ESREF'96 - Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis. October 8-11, 1996. Enschede, The Netherlands.


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