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Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature

dc.contributor.authorSheoran, M.
dc.contributor.authorKim, D.S.
dc.contributor.authorRohatgi, A.
dc.contributor.authorDekkers, Harold
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorYoung, M.
dc.contributor.authorAsher, S.
dc.date.accessioned2021-10-17T10:42:16Z
dc.date.available2021-10-17T10:42:16Z
dc.date.issued2008
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14463
dc.sourceIIOimport
dc.titleHydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature
dc.typeJournal article
dc.contributor.imecauthorDekkers, Harold
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage172107
dc.source.journalApplied Physics Letters
dc.source.issue17
dc.source.volume92
imec.availabilityPublished - open access


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