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Processing factors impacting the leakage current and flicker noise of germanium p+-n junctions on silicon substrates

dc.contributor.authorSimoen, Eddy
dc.contributor.authorSonde, Sushant
dc.contributor.authorClaeys, Cor
dc.contributor.authorSatta, Alessandra
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorTodi, Ravi
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-17T10:48:52Z
dc.date.available2021-10-17T10:48:52Z
dc.date.issued2008
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14480
dc.sourceIIOimport
dc.titleProcessing factors impacting the leakage current and flicker noise of germanium p+-n junctions on silicon substrates
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpageH145
dc.source.endpageH150
dc.source.journalJournal of the Electrochemical Society
dc.source.issue3
dc.source.volume155
imec.availabilityPublished - imec


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