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High Ge content SGOI substrates obtained by the Ge condensation technique: a template for growth of strained epitaxial Ge

dc.contributor.authorSouriau, Laurent
dc.contributor.authorTerzieva, Valentina
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClemente, Francesca
dc.contributor.authorBrijs, Bert
dc.contributor.authorMoussa, Alain
dc.contributor.authorMeuris, Marc
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-17T10:58:10Z
dc.date.available2021-10-17T10:58:10Z
dc.date.issued2008
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14506
dc.sourceIIOimport
dc.titleHigh Ge content SGOI substrates obtained by the Ge condensation technique: a template for growth of strained epitaxial Ge
dc.typeJournal article
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorTerzieva, Valentina
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage23
dc.source.endpage26
dc.source.journalThin Solid Films
dc.source.issue1
dc.source.volume517
imec.availabilityPublished - open access
imec.internalnotespaper from ICSI-5


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