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Ion implantation for low-resistive source/drain contacts in FinFET devices

dc.contributor.authorVan Dal, Mark
dc.contributor.authorDuffy, Ray
dc.contributor.authorPawlak, Bartek
dc.contributor.authorCollaert, Nadine
dc.contributor.authorJurczak, Gosia
dc.contributor.authorLander, Rob
dc.date.accessioned2021-10-17T11:39:26Z
dc.date.available2021-10-17T11:39:26Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14619
dc.sourceIIOimport
dc.titleIon implantation for low-resistive source/drain contacts in FinFET devices
dc.typeProceedings paper
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1070-E02-01
dc.source.conferenceDoping Engineering for Front-End Processing
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 1070


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