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EBIC study of recombination activity of oxygen precipitation related defects in Si

dc.contributor.authorSeifert, W.
dc.contributor.authorKittler, M.
dc.contributor.authorVanhellemont, Jan
dc.date.accessioned2021-09-29T15:23:41Z
dc.date.available2021-09-29T15:23:41Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1470
dc.sourceIIOimport
dc.titleEBIC study of recombination activity of oxygen precipitation related defects in Si
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage260
dc.source.endpage4
dc.source.journalMaterials Science and Engineering B: Solid State Materials for Advanced Technology
dc.source.issue1_3
dc.source.volume42
imec.availabilityPublished - open access
imec.internalnotes4th International workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS'96). 3-6 June 1996; Escorial, Spain


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