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Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates

dc.contributor.authorVerhulst, Anne
dc.contributor.authorVandenberghe, William
dc.contributor.authorMaex, Karen
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T12:31:35Z
dc.date.available2021-10-17T12:31:35Z
dc.date.issued2008
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14748
dc.sourceIIOimport
dc.titleComplementary silicon-based heterostructure tunnel-FETs with high tunnel rates
dc.typeJournal article
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage1398
dc.source.endpage1401
dc.source.journalIEEE Electron Device Letters
dc.source.issue12
dc.source.volume29
imec.availabilityPublished - imec


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