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Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization

dc.contributor.authorVerhulst, Anne
dc.contributor.authorVandenberghe, William
dc.contributor.authorMaex, Karen
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T12:31:58Z
dc.date.available2021-10-17T12:31:58Z
dc.date.issued2008
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14749
dc.sourceIIOimport
dc.titleBoosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
dc.typeJournal article
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.source.peerreviewyes
dc.source.beginpage64514
dc.source.journalJournal of Applied Physics
dc.source.issue6
dc.source.volume104
dc.identifier.urlhttp://link.aip.org/link/?JAP/104/064514
imec.availabilityPublished - imec


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