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Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

dc.contributor.authorWang, X.P.
dc.contributor.authorLi, M.F.
dc.contributor.authorYu, HongYu
dc.contributor.authorYang, J.J.
dc.contributor.authorChen, J.D.
dc.contributor.authorZhu, C.X.
dc.contributor.authorDu, A.Y.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorChin, A.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2021-10-17T12:42:20Z
dc.date.available2021-10-17T12:42:20Z
dc.date.issued2008
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14774
dc.sourceIIOimport
dc.titleWidely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric
dc.typeJournal article
dc.contributor.imecauthorBiesemans, Serge
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage50
dc.source.endpage53
dc.source.journalIEEE Electron Device Letters
dc.source.issue1
dc.source.volume29
imec.availabilityPublished - open access


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