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Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge

dc.contributor.authorYu, Hong-Yu
dc.contributor.authorChang, Shou-Zen
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorWang, Xin Peng
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorKaczer, Ben
dc.contributor.authorAbsil, Philippe
dc.contributor.authorLauwers, Anne
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-17T13:04:11Z
dc.date.available2021-10-17T13:04:11Z
dc.date.issued2008
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14827
dc.sourceIIOimport
dc.titleTransistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge
dc.typeJournal article
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage263502
dc.source.journalApplied Physics Letters
dc.source.issue26
dc.source.volume93
dc.identifier.urlhttp://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000093000026263502000001&idtype=cvips&gifs=Yes
imec.availabilityPublished - imec


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