dc.contributor.author | Afanasiev, Valeri | |
dc.contributor.author | Houssa, Michel | |
dc.contributor.author | Stesmans, Andre | |
dc.contributor.author | Souriau, Laurent | |
dc.contributor.author | Loo, Roger | |
dc.contributor.author | Meuris, Marc | |
dc.date.accessioned | 2021-10-17T21:17:16Z | |
dc.date.available | 2021-10-17T21:17:16Z | |
dc.date.issued | 2009 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/14877 | |
dc.source | IIOimport | |
dc.title | Electronic properties of Ge dangling bond centres at Si1-xGex/SiO2 interfaces | |
dc.type | Journal article | |
dc.contributor.imecauthor | Afanasiev, Valeri | |
dc.contributor.imecauthor | Houssa, Michel | |
dc.contributor.imecauthor | Stesmans, Andre | |
dc.contributor.imecauthor | Souriau, Laurent | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.imecauthor | Meuris, Marc | |
dc.contributor.orcidimec | Houssa, Michel::0000-0003-1844-3515 | |
dc.contributor.orcidimec | Souriau, Laurent::0000-0002-5138-5938 | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.contributor.orcidimec | Meuris, Marc::0000-0002-9580-6810 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 222106 | |
dc.source.journal | Applied Physics Letters | |
dc.source.issue | 22 | |
dc.source.volume | 95 | |
imec.availability | Published - imec | |