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Electronic properties of Ge dangling bond centres at Si1-xGex/SiO2 interfaces

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.contributor.authorSouriau, Laurent
dc.contributor.authorLoo, Roger
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-17T21:17:16Z
dc.date.available2021-10-17T21:17:16Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14877
dc.sourceIIOimport
dc.titleElectronic properties of Ge dangling bond centres at Si1-xGex/SiO2 interfaces
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage222106
dc.source.journalApplied Physics Letters
dc.source.issue22
dc.source.volume95
imec.availabilityPublished - imec


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