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Band offsets at interfaces of (100)InxGa1-xAs (0<x<0.53) with Al2O3 and HfO2

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDelabie, Annelies
dc.contributor.authorSioncke, Sonja
dc.contributor.authorO'Mahony, E
dc.contributor.authorPovey, I.M.
dc.contributor.authorPemble, M.E.
dc.contributor.authorO'Connor, E.
dc.contributor.authorHurley, P.K.
dc.contributor.authorNewcomb, S.B.
dc.date.accessioned2021-10-17T21:17:17Z
dc.date.available2021-10-17T21:17:17Z
dc.date.issued2009
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14878
dc.sourceIIOimport
dc.titleBand offsets at interfaces of (100)InxGa1-xAs (0<x<0.53) with Al2O3 and HfO2
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.source.peerreviewyes
dc.source.beginpage1550
dc.source.endpage1553
dc.source.journalMicroelectronic Engineering
dc.source.issue7_9
dc.source.volume86
dc.identifier.urlhttp://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6V0W-4VT14BY-4&_user=799533&_coverDate=09%2F30%2F2009&_rdoc=10&_fmt=hi
imec.availabilityPublished - imec
imec.internalnotesINFOS 2009


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