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dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDelabie, Annelies
dc.contributor.authorSioncke, Sonja
dc.contributor.authorO'Mahony, E
dc.contributor.authorPovey, I.M.
dc.contributor.authorPemble, M.E.
dc.contributor.authorO'Connor, E.
dc.contributor.authorHurley, P.K.
dc.contributor.authorNewcomb, S.B.
dc.date.accessioned2021-10-17T21:17:18Z
dc.date.available2021-10-17T21:17:18Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14879
dc.sourceIIOimport
dc.titleEnergy barriers at interfaces between (100) InxGa1-xAs(0<=x<=0.53) and atomic layer deposited Al2O3 and HfO2
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.source.peerreviewyes
dc.source.beginpage202110
dc.source.journalApplied Physics Letters
dc.source.issue20
dc.source.volume94
dc.identifier.urlhttp://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000094000020202110000001&idtype=cvips&prog=search
imec.availabilityPublished - imec


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