Show simple item record

Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors

dc.contributor.authorSimoen, Eddy
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorCuthbertson, Alan
dc.contributor.authorClaeys, Cor
dc.contributor.authorDeferm, Ludo
dc.date.accessioned2021-09-29T15:25:48Z
dc.date.available2021-09-29T15:25:48Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1487
dc.sourceIIOimport
dc.titleImpact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2261
dc.source.endpage2268
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume43
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
1460.pdf
Size:
945.5Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record