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Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodes

dc.contributor.authorSimoen, Eddy
dc.contributor.authorDubuc, Jean-Paul
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T15:26:12Z
dc.date.available2021-09-29T15:26:12Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1490
dc.sourceIIOimport
dc.titleImpact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodes
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage179
dc.source.endpage182
dc.source.journalMaterials Science and Engineering B
dc.source.volume36
imec.availabilityPublished - open access
imec.internalnotesE-MRS Spring Meeting Symposium on 'Carbon, Hydrogen, Nitrogen and Oxygen on Silicon and in Other Elemental Semiconductors'; May 1995; Strasbourg, France


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