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Impact of the Ge content on the bandgap-narrowing induced leakage current of recessed Si1-xGex source/drain junctions

dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T21:20:00Z
dc.date.available2021-10-17T21:20:00Z
dc.date.issued2009
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14946
dc.sourceIIOimport
dc.titleImpact of the Ge content on the bandgap-narrowing induced leakage current of recessed Si1-xGex source/drain junctions
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage1418
dc.source.endpage1423
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue7
dc.source.volume56
imec.availabilityPublished - imec


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