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The effect of oxygen during irradiation of silicon with low energy Cs+ ions

dc.contributor.authorBerghmans, Bart
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-17T21:22:22Z
dc.date.available2021-10-17T21:22:22Z
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14979
dc.sourceIIOimport
dc.titleThe effect of oxygen during irradiation of silicon with low energy Cs+ ions
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewyes
dc.source.beginpage33509
dc.source.journalJournal of Applied Physics
dc.source.issue3
dc.source.volume106
dc.identifier.urlhttp://link.aip.org/link/?JAP/106/033509
imec.availabilityPublished - imec


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