Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/d-Si:C/Si(100) substrates
dc.contributor.author | Buca, D | |
dc.contributor.author | Minamisawa, R A | |
dc.contributor.author | Trinkaus, H | |
dc.contributor.author | Hollander, B | |
dc.contributor.author | Mantl, S | |
dc.contributor.author | Loo, Roger | |
dc.contributor.author | Nguyen, Duy | |
dc.date.accessioned | 2021-10-17T21:29:49Z | |
dc.date.available | 2021-10-17T21:29:49Z | |
dc.date.issued | 2009 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/15056 | |
dc.source | IIOimport | |
dc.title | Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/d-Si:C/Si(100) substrates | |
dc.type | Journal article | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 144103 | |
dc.source.journal | Applied Physics Letters | |
dc.source.issue | 14 | |
dc.source.volume | 95 | |
imec.availability | Published - imec |
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