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Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/d-Si:C/Si(100) substrates

dc.contributor.authorBuca, D
dc.contributor.authorMinamisawa, R A
dc.contributor.authorTrinkaus, H
dc.contributor.authorHollander, B
dc.contributor.authorMantl, S
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.date.accessioned2021-10-17T21:29:49Z
dc.date.available2021-10-17T21:29:49Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15056
dc.sourceIIOimport
dc.titleRelaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/d-Si:C/Si(100) substrates
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage144103
dc.source.journalApplied Physics Letters
dc.source.issue14
dc.source.volume95
imec.availabilityPublished - imec


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