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dc.contributor.authorCaymax, Matty
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDelabie, Annelies
dc.contributor.authorSioncke, Sonja
dc.contributor.authorLin, Dennis
dc.contributor.authorScarrozza, Marco
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorWang, Wei-E
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T21:31:29Z
dc.date.available2021-10-17T21:31:29Z
dc.date.issued2009
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15068
dc.sourceIIOimport
dc.titleInterfaces of high-k dielectrics on GaAs: their common features and the relationship with Fermi level pinning
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1529
dc.source.endpage1535
dc.source.journalMicroelectronic Engineering
dc.source.issue7_9
dc.source.volume86
imec.availabilityPublished - open access
imec.internalnotesINFOS 2009


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