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dc.contributor.authorCollaert, Nadine
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorRakowski, Michal
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorDe Wachter, Bart
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-17T21:39:24Z
dc.date.available2021-10-17T21:39:24Z
dc.date.issued2009
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15124
dc.sourceIIOimport
dc.titleOptimizing the read-out bias for the capacitorless 1T bulk FinFET RAM cell
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorRakowski, Michal
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorDe Wachter, Bart
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1377
dc.source.endpage1379
dc.source.journalIEEE Electron Device Letters
dc.source.issue12
dc.source.volume30
imec.availabilityPublished - open access


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