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The role of the interfaces in the 1/f noise of MOSFETs with high-k gate stacks

dc.contributor.authorCrupi, F.
dc.contributor.authorMagnone, P.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorPantisano, Luigi
dc.contributor.authorGiusi, G.
dc.contributor.authorPace, C.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T21:42:32Z
dc.date.available2021-10-17T21:42:32Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15145
dc.sourceIIOimport
dc.titleThe role of the interfaces in the 1/f noise of MOSFETs with high-k gate stacks
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage87
dc.source.endpage99
dc.source.conferenceSilicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics 10
dc.source.conferencedate24/05/2009
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 19, issue 2


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