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Optimized Ni oxidation in 80 nm contact holes for integration of forming-free and low-power Ni/NiO/Ni memory cells

dc.contributor.authorGoux, Ludovic
dc.contributor.authorLisoni, Judit
dc.contributor.authorWang, Xin Peng
dc.contributor.authorJurczak, Gosia
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-17T22:29:36Z
dc.date.available2021-10-17T22:29:36Z
dc.date.issued2009
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15379
dc.sourceIIOimport
dc.titleOptimized Ni oxidation in 80 nm contact holes for integration of forming-free and low-power Ni/NiO/Ni memory cells
dc.typeJournal article
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpage2363
dc.source.endpage2368
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue10
dc.source.volume56
imec.availabilityPublished - imec


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