Show simple item record

Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon

dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorMaes, Herman
dc.contributor.authorVan Bavel, Mieke
dc.contributor.authorLangouche, G.
dc.contributor.authorStesmans, Andre
dc.contributor.authorClauws, P.
dc.date.accessioned2021-09-29T15:33:07Z
dc.date.available2021-09-29T15:33:07Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1538
dc.sourceIIOimport
dc.titleInfluence of oxygen and carbon on the generation and annihilation of radiation defects in silicon
dc.typeJournal article
dc.contributor.imecauthorVan Bavel, Mieke
dc.contributor.imecauthorStesmans, Andre
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage196
dc.source.endpage199
dc.source.journalMaterials Science and Engineering B
dc.source.volume36
imec.availabilityPublished - open access
imec.internalnotesPaper presented at the E-MRS Symposium on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. May 1995. Strasbourg, France.


Files in this item

Thumbnail
Name:
1512.pdf
Size:
232.8Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record