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First-principles study of the electronic properties of Ge dangling bonds at the (100) Si1xGex /SiO2 interfaces

dc.contributor.authorHoussa, Michel
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T22:58:15Z
dc.date.available2021-10-17T22:58:15Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15491
dc.sourceIIOimport
dc.titleFirst-principles study of the electronic properties of Ge dangling bonds at the (100) Si1xGex /SiO2 interfaces
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage162109
dc.source.journalApplied Physics Letters
dc.source.issue16
dc.source.volume95
imec.availabilityPublished - open access


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