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Strain mapping of tensile strained silicon transistors with embedded Si1yCy source and drain by dark-field holography

dc.contributor.authorHue, Florent
dc.contributor.authorHytch, Martin
dc.contributor.authorHoudellier, Florent
dc.contributor.authorBender, Hugo
dc.contributor.authorClaverie, Alain
dc.date.accessioned2021-10-17T23:02:14Z
dc.date.available2021-10-17T23:02:14Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15506
dc.sourceIIOimport
dc.titleStrain mapping of tensile strained silicon transistors with embedded Si1yCy source and drain by dark-field holography
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.source.peerreviewyes
dc.source.beginpage73103
dc.source.journalApplied Physics Letters
dc.source.issue7
dc.source.volume95
imec.availabilityPublished - imec


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