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Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites

dc.contributor.authorKadashchuk, Andriy
dc.contributor.authorSchols, Sarah
dc.contributor.authorHeremans, Paul
dc.contributor.authorSkryshevski, Y.
dc.contributor.authorPiryatinski, Y.
dc.contributor.authorBeinik, I.
dc.contributor.authorTeichert, T.
dc.contributor.authorHernandez-Sosa, G.
dc.contributor.authorSitter, H.
dc.contributor.authorAndreev, A.
dc.contributor.authorFrank, P.
dc.contributor.authorWinkler, A.
dc.date.accessioned2021-10-17T23:17:48Z
dc.date.available2021-10-17T23:17:48Z
dc.date.issued2009
dc.identifier.issn0021-9606
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15564
dc.sourceIIOimport
dc.titleOrigin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites
dc.typeJournal article
dc.contributor.imecauthorKadashchuk, Andriy
dc.contributor.imecauthorSchols, Sarah
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpage84901
dc.source.journalJournal of Chemical Physics
dc.source.issue8
dc.source.volume130
imec.availabilityPublished - imec


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