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Energy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure

dc.contributor.authorLi, Zilan
dc.contributor.authorHoussa, Michel
dc.contributor.authorSchram, Tom
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-18T00:02:04Z
dc.date.available2021-10-18T00:02:04Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15715
dc.sourceIIOimport
dc.titleEnergy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage183506
dc.source.journalApplied Physics Letters
dc.source.issue18
dc.source.volume95
imec.availabilityPublished - open access


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