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Suppression of domain formation in GaN layers grown on Ge(111)

dc.contributor.authorLieten, Ruben
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T00:02:39Z
dc.date.available2021-10-18T00:02:39Z
dc.date.issued2009
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15717
dc.sourceIIOimport
dc.titleSuppression of domain formation in GaN layers grown on Ge(111)
dc.typeJournal article
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.identifier.doi10.1016/j.jcrysgro.2008.11.077
dc.source.peerreviewyes
dc.source.beginpage1306
dc.source.endpage1310
dc.source.journalJournal of Crystal Growth
dc.source.volume311
imec.availabilityPublished - open access


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